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Superconductor-Insulator Transition in Nanowires
January 15, 20164:00 pm – 5:00 pm (CDT)

Superconductor-Insulator Transition in Nanowires

Speaker:

Andrey Rogachev (University of Utah)

Host:

Ar. Abanov

Location:

Address:

Mitchell Institute for Fundamental Physics & Astronomy

College Station, Texas 77843

Event Details

Superconductivity in one-dimensional wires can be affected by several physical processes with different characteristic length scales. To identify a process dominant in the regime of complete superconductivity suppression we studied transport properties of very narrow (9–20 nm) MoGe wires fabricated by advanced electron-beam lithography in a wide range of lengths, 1–25 micrometers. We observed that the wires undergo a superconductor-insulator transition (SIT) that is controlled by cross sectional area of a wire and possibly also by the width-to-thickness ratio. The results show strong quantitative disagreement with current theories. We also found that the SIT in nanowires can be driven by magnetic field. The scaling analysis of this transition and alternative interpretation based on quantum corrections will be presented.

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