Event Details

Heterostructures combining topological and non-topological materials constitute the next frontier in the effort to incorporate topological insulators (TIs) into functional electronic devices. I show that the properties of the interface states appearing at the planar boundary between a topologically-trivial semiconductor (SE) and a TI are qualitatively different from those at the vacuum surface, and are controlled by the symmetry of the interface. In contrast to the well-studied helical Dirac surface states, SE-TI interface states exhibit elliptical contours of constant energy and complex spin textures with broken helicity. Experimental signatures include out of plane spin accumulation under a transport current and the opening of a spectral gap that depends on the direction of an applied in-plane magnetic field. I will also briefly discuss how symmetry breaking at the interface influences the behavior of the thin films of topological insulators and proximity-induced superconductivity.