Dr. Sung Oh Woo
Mitchell Physics Building
College Station, Texas 77843-4242
The electronic properties of graphene are strongly dependent on the carrier density which can be affected locally by irradiation or surface adsorption. We will present recent work in several departmental research groups that utilize a range of techniques to achieve control of the carrier density locally [1-3]. We first show that the electronic properties of graphene change as a result of electron beam irradiation altering the local electron doping. As the irradiated graphene is then exposed to air, environmental molecules are adsorbed on graphene, and the electronic properties can be explained by charged impurity scattering. Similarly, we show that graphene is doped with electrons as a result of Li deposition on graphene at cryogenic temperatures. As temperature increases, the transport behavior of graphene changes, which we argue is primarily due to charged impurity scattering, originating from the reduction of the atomic Li adatoms on graphene.
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