Research in the Scanning Tunneling Microscopy (STM) Laboratory at Texas A&M is aimed at developing a comprehensive experimental picture of the structure and electronic properties of III-V semiconductor surfaces and interfaces. Our current work has taken advantage of the nanometer-scale spatial resolution afforded by STM to advance our understanding of two especially significant problems in III-V epitaxial growth: the precise structure of the interfaces in type-II semiconductor superlattices and quantum wells, and the onset of atomic ordering in III-V semiconductor alloys. Dr. Weimer received his S.B. degree in physics from the Massachusetts Institute of Technology in 1976, and his M.S. and Ph.D. degrees from the California Institute of Technology in 1978 and 1986, respectively. He held a postdoctoral research fellowship at Caltech from 1986 through 1988 before joining the physics faculty. Dr. Weimer was a 1989 recipient of an ONR Young Investigator Award, and has served on the Program Committee for the International Conference on Scanning Tunneling Microscopy/Spectroscopy as well as the Governing Board of the Nanometer Science and Technology Division of the American Vacuum Society. He is an active member of the American Association for the Advancement of Science, the American Physical Society, the American Vacuum Society, the Materials Research Society, and Sigma Xi.
K. Kanedy, F. Lopez, M. R. Wood, C. F. Gmachl, M. Weimer, J. F. Klem, S. D. Hawkins, E. A. Shaner, and J. K. Kim. “Visualizing period fluctuations in strained-layer superlattices with scanning tunneling microscopy.” Applied Physics Letters, 112(4), 042105, Jan 2018.